ar c hive inf o rmati o n archive information replaced by MHL9838n. there are no form, fit or function changes with this part replacement. n suffix added to part number to indicate transition to lead - free terminations. MHL9838 1 rf device data freescale semiconductor cellular band rf linear ldmos amplifier designed for ultra - linear amplifier applications in 50 ohm system s operating in the cellular frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as tdma and cdma. ? third order intercept: 50 dbm typ ? power gain: 31 db typ (@ f = 880 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications ? for use in tdma and cdma multi - carrier applications table 1. absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +6 dbm storage temperature range t stg - 40 to +100 c operating case temperature range t c - 20 to +100 c table 2. electrical characteristics (v dd = 28 vdc, t c = 25 c; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 770 800 ma power gain (f = 880 mhz) g p 30 31 32 db gain flatness (f = 800 - 925 mhz) g f ? 0.1 0.3 db power output @ 1 db comp. (f = 880 mhz) p out 1 db ? 39 ? dbm input vswr (f = 800 - 925 mhz) vswr in ? 1.2:1 1.5:1 output vswr (f = 800 - 925 mhz) vswr out ? 1.2:1 1.5:1 third order intercept (f1 = 879 mhz, f2 = 884 mhz) ito 49 50 ? dbm noise figure (f = 925 mhz) nf ? 3.7 4.5 db MHL9838 rev. 4, 1/2005 freescale semiconductor technical data MHL9838 800 - 925 mhz 8.0 w, 31 db rf linear ldmos amplifier case 301ap - 02, style 1 ? freescale semiconductor, inc., 2005. all rights reserved.
ar c hive inf o rmati o n archive information 2 rf device data freescale semiconductor MHL9838 typical characteristics p1db, ito (dbm) figure 1. power gain, input return loss, output return loss versus frequency f, frequency (mhz) ?40 0 figure 2. p1db, ito versus frequency 30 900 f, frequency (mhz) 60 40 400 1600 500 figure 3. power gain, i dd versus temperature temperature ( c) 28 figure 4. ito, p1db versus temperature figure 5. phase (1) , group delay (1) versus temperature ?40 ?440 ?420 40 29 31 20 ?20 20 800 1200 700 1100 120 ?450 2000 irl 33 30 32 40 52 42 44 48 ?430 power gain/return loss (db) figure 6. gain flatness, phase linearity versus temperature 0.10 0.30 0 0.20 35 50 1200 , power gain (db) 60 ( phase 0.20 0.50 0.70 0.30 orl g p v dd = 28 vdc t c = 25 c ito p1db i 720 780 740 800 760 0 40 100 ?20 80 i dd temperature ( c) ?40 20 120 60 0 40 100 ?20 80 ito p1db ?445 ?425 ?435 ) group delay (ns) 1.8 2.1 2.2 2.0 temperature ( c) ?40 20 120 60 0 40 100 ?20 80 phase group delay 1. in production test fixture , gain flatness (db) ( phase linearity ) temperature ( c) ?40 20 120 60 0 40 100 ?20 80 v dd = 28 vdc f = 800?925 mhz g f phase linearity g p dd , (ma) ito (dbm) p1db (dbm) 35 39 46 38 37 36 g f 55 45 1000 600 800 820 50 40 41 1.9 0.05 0.25 0.15 0.40 0.60 0.80 g p v dd = 28 vdc t c = 25 c v dd = 28 vdc f = 880 mhz v dd = 28 vdc f = 880 mhz v dd = 28 vdc f = 880 mhz
ar c hive inf o rmati o n archive information MHL9838 3 rf device data freescale semiconductor typical characteristics ito (dbm) figure 7. power gain, i dd versus voltage voltage (volts) 30.5 figure 8. ito, p1db versus voltage 42 26 voltage (volts) 52 24 28 22 22 figure 9. phase (1) , group delay (1) versus voltage voltage (volts) ?434.5 figure 10. phase linearity, gain flatness versus voltage 22 31.3 ?433 28 30.7 31.1 26 24 28 30 30 i dd ?432 ?434 ?432.5 0.10 0.45 0.20 0.25 0.35 46 30 g p f = 880 mhz t c = 25 c ito p1db f = 880 mhz t c = 25 c group delay (ns) 2.06 2.09 2.07 2.11 2.08 26 24 voltage (volts) 22 30 26 28 24 30.9 i 400 800 600 900 700 dd (ma) 500 48 44 ( phase ) phase f = 880 mhz t c = 25 c group delay 0.08 0.13 0.15 0.11 0.12 0.14 0.10 0.40 0.30 g f phase linearity f = 800?925 mhz t c = 25 c 31.5 ( phase linearity ) 35 39 37 38 36 p1db (dbm) , power gain (db) , gain flatness (db) g p g f 50 40 ?433.5 2.10 0.15 0.09 1. in production test fixture
ar c hive inf o rmati o n archive information 4 rf device data freescale semiconductor MHL9838 notes
ar c hive inf o rmati o n archive information MHL9838 5 rf device data freescale semiconductor notes
ar c hive inf o rmati o n archive information 6 rf device data freescale semiconductor MHL9838 notes
ar c hive inf o rmati o n archive information MHL9838 7 rf device data freescale semiconductor package dimensions notes: 1. interpret dimensions and tolerances per asme y14.5m, 1994. 2. controlling dimension: inch. 3. dimension "f" to center of leads. style 1: pin 1. rf input 2. vdd1 3. vdd2 4. rf output case: ground g w n l h r k j a m 0.020 (0.51) t m m 0.020 (0.51) t 12 34 f e c seating plane dim min max min max millimeters inches a 1.760 1.780 44.70 b 1.370 1.390 34.80 35.31 c 0.245 0.265 6.22 6.73 d 0.017 0.023 0.43 0.58 e 0.080 0.100 2.03 2.54 f 0.086 bsc 2.18 bsc g 1.650 bsc 41.91 bsc h 1.290 bsc 32.77 bsc j 0.266 0.280 6.76 7.11 k 0.125 0.165 3.18 4.19 l 0.990 bsc 25.15 bsc 0.390 bsc 9.91 bsc n p 0.118 0.132 3.00 3.35 q r 0.535 0.555 13.59 14.10 s 0.445 0.465 11.30 11.81 w 45.21 case 301ap - 02 issue c b m 0.020 (0.51) t m m s m 0.008 (0.20) a m t 0.090 bsc 2.29 bsc 0.008 0.013 0.20 0.33 d 4x q 2x b a s s a t p 4x
ar c hive inf o rmati o n archive information 8 rf device data freescale semiconductor MHL9838 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com MHL9838 rev. 4, 1/2005 document number:
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